Semiconductor device

Details Semiconductor device Semiconductor device

1997-02-21

1998-07-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257324, 257368, 257386, 257394, 257618, 257750, 257773, H01L 2972

Patent

active

057838496

ABSTRACT:
On a semiconductor substrate (1) is provided an insulator film, on which is formed a lower gate electrode including a first lower gate electrode (5a) and a second lower gate electrode (5b), on which lower gate electrode is formed a lower gate insulator film. On the lower gate insulator film is disposed a device region (9), on which is disposed an upper gate electrode (13) by way of an upper gate insulator film. The device region (9) has island-shaped patterns. The first lower gate electrode (5a) is placed in substantially the middle part of the device region (9), while the second lower gate electrode (5b) is provided in parallel with the first lower gate electrode (5a) and at a boundary between the device region (9) and the insulator film. The upper gate electrode (13) is positioned orthogonal to the lower gate electrodes (5a, 5b). This configuration will make it possible to inhibit the occurrence of current leakage due to parasitic transistors.

REFERENCES:
patent: 5698872 (1997-12-01), Takase et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1649134