Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365207, 365208, G11C 700

Patent

active

061446033

ABSTRACT:
A semiconductor memory device capable of over-drive sense operation to commence re-store to a memory cell immediately after the sense operation for satisfying a time specification for high level time period of the RASB signal, is provided a transfer gate or ON-OFF control in connection between bit lines in a memory cell side and bit lines in a sense amplifier side and a sense amplifier connected to I/O buses through a transistor operating under ON-OFF control in accordance with column selecting signal, and an amplifier is provided with a p-channel transistor connected to bit lines in the memory cell side.

REFERENCES:
patent: 5566116 (1996-10-01), Kang
patent: 5930190 (1999-07-01), Hayano et al.
patent: 5970007 (1999-10-01), Shiratake

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