Ferroelectric memory device and a method for manufacturing there

Details Ferroelectric memory device and a method for manufacturing there Ferroelectric memory device and a method for manufacturing there

1997-11-17

2000-11-07

Zarabian, Amir

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518907, G11C 1122

Patent

active

061445789

ABSTRACT:
It is an object of the present invention to provide a ferroelectric memory device including a load capacitor corresponding to an actual read-out time period appropriately and capable of reading out stored data in a high-speed as well as saving electric power consumption. An applying duration "t" (=2.5n seconds) which generates the maximum value of the differential voltage .DELTA.V of approximately 0.87V is selected when a voltage value corresponding the minimum detectable value of the sense amplifier AMP1 is 0.8V. Also, capacitance C of the load capacitor Cb is determined at the capacitance (.apprxeq.1.25 pF) which maximize the differential voltage .DELTA.V when the applying duration "t" is 2.5n seconds. Another applying duration "tp" (not shown) of read-out voltage Vp is set as 2.5n seconds the same as the applying duration of the voltage Vd for determining characteristics of a capacitor. A duration required for rewrite operation can be shorten when the applying duration "tp" of read-out voltage Vp is set shorter. In this way, a duration required from read-out operation to rewrite operation can be shorten as well as saving electric power consumption.

REFERENCES:
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5579257 (1996-11-01), Tai
patent: 5621680 (1997-04-01), Newman et al.
patent: 5721699 (1998-02-01), DeVilbiss
patent: 5724283 (1998-03-01), Tai
patent: 5737260 (1998-04-01), Takata et al.
patent: 5764561 (1998-06-01), Nishimura

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