Method of fabricating a barrier against metal diffusion

Details Method of fabricating a barrier against metal diffusion Method of fabricating a barrier against metal diffusion

1996-08-13

1998-07-21

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438643, 438653, 438658, H01L 214763

Patent

active

057834830

ABSTRACT:
A method of forming a barrier layer for preventing the diffusion of a metal interconnect through an interlayer dielectric of an integrated circuit and to act as an etch stop. A thin metal layer is formed on the interlayer dielectric and then oxidized to form a metal-oxide barrier layer.

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