Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-10-03

2000-11-07

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257393, 257395, 257296, H01L 31119, H01L 27119, H01L 2976, H01L 27108

Patent

active

061440795

ABSTRACT:
In a semiconductor device, a plurality of MIS transistors of the same conductivity type having different thresholds are formed at a main surface of semiconductor substrate, and impurity profiles on section extending in a depth direction from the main surface of the semiconductor substrate through respective channel regions of the plurality of MIS transistors have peaks located at different depths. This structure is formed by ion implantation performed on the respective channel regions with different implanting energies or different ion species. According to this semiconductor device, the thresholds of the MIS transistors can be individually controlled, and transistor characteristics optimum for uses can be obtained.

REFERENCES:
patent: 5293060 (1994-03-01), Komori et al.
patent: 5470774 (1995-11-01), Kunitou
patent: 5578507 (1996-11-01), Kuroi
patent: 5641699 (1997-06-01), Hirase et al.
patent: 5674763 (1997-10-01), Sugiura et al.

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