Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-20
2000-11-07
Smith, Matthew
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257528, 257529, 257530, 438239, H01L 2362, H01L 2900, H01L 218242
Patent
active
061440744
ABSTRACT:
At least one dummy storage node is formed for a plurality of storage nodes provided in stack type memory cells in which a plate electrode is grounded through the at least one dummy storage node, thereby charges flowed into the plate electrode being discharged, when dry etching is performed by using charged particles, thus preventing electrical stress from acting on a capacitor dielectric film provided between the storage nodes and the plate electrode.
REFERENCES:
patent: 3935586 (1976-01-01), Landheer et al.
patent: 4543597 (1985-09-01), Shibata
patent: 5361234 (1994-11-01), Iwasa
patent: 5386135 (1995-01-01), Nakazato et al.
patent: 5438218 (1995-08-01), Nakamura et al.
patent: 5747843 (1998-05-01), Matsuo et al.
patent: 5889307 (1999-03-01), Duesman
patent: 5982007 (1999-11-01), Lee et al.
Park, et al. "A Stack Capacitor Technology with (Ba,Sr)TiO.sub.3 Dielectrics and Pt Electrodes for 1Giga-Bit Density DRAM," 1996 Symposium on VLSI Technology Digest of Technical Papers, 3.2, pp. 24-25.
Kabushiki Kaisha Toshiba
Malsawma Lex H.
Smith Matthew
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