Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-08-28
2000-11-07
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257409, 257360, 257361, 257488, 257492, 257493, H01L 2976, H01L 2994, H01L 2362, H01L 2358
Patent
active
061440701
ABSTRACT:
A transistor including a source region 506 in a semiconductor body 502; a bulk region 508 in the semiconductor body adjacent the source region; a drain region in the semiconductor body adjacent the bulk region but opposite the source region, the drain region including doped regions 504,514 of n and p dopant types; and a field plate 516 formed over the semiconductor body adjacent the drain region between the drain region and the bulk region.
REFERENCES:
patent: 5796146 (1998-08-01), Ludikhuize
Baldwin David J.
Devore Joseph A.
Teggatz Ross E.
Brady W. James
Hoel Carlton H.
Loke Steven H.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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