Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-10-21
1998-07-21
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429819, 2042982, C23C 1434
Patent
active
057830487
ABSTRACT:
A sputtering apparatus for forming a thin film on a substrate is disclosed. The sputtering apparatus includes a target for providing target material for forming the thin film, wherein the target includes a first area. The sputtering apparatus further includes a plasma discharge to enable removal of target material from the target. In addition, a main magnet is provided for generating a main magnetic field for controlling the plasma discharge to remove the target material. Further, a compensating magnet is utilized which is positioned adjacent to the first area. The compensating magnet generates a compensating magnetic field which interacts with the main magnetic field to control the plasma discharge in the first area to form a desired erosion pattern in the first area and enable formation of a substantially uniform film thickness on the substrate.
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Nguyen Nam
Tokyo Electron Limited
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