Method for forming gap filling silicon oxide intermetal dielectr

Details Method for forming gap filling silicon oxide intermetal dielectr Method for forming gap filling silicon oxide intermetal dielectr

1999-10-01

2000-11-07

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438780, 438778, 438788, 438789, 257752, 257758, H01L 2131

Patent

active

061436739

ABSTRACT:
A method for forming within a microelectronics fabrication a dielectric layer formed over, around and between patterned conductor layers. There is first provided a substrate employed within a microelectronics fabrication upon which is formed a patterned conductor layers. There is then formed over the patterned conductor layer a silicon oxide dielectric layer. There is then treated the silicon oxide dielectric layer to an anisotropic sputter etching process to remove silicon oxide dielectric material without re-deposition from the bottom of the gap between lines of the patterned conductor layer and to reform the silicon oxide dielectric layers on the sidewalls of the patterned lines to form spacer layers thereon. Both the silicon oxide dielectric layer deposition process and the sputter etching process may be repeated as desired to form the desired depth of trench and shape of spacer layer. There is then exposed the substrate to a nitrogen plasma. There is then formed over the substrate a gap filling silicon oxide dielectric layer to complete the formation of the inter-level dielectric layer with minimal void content in gaps between patterned lines.

REFERENCES:
patent: 4886765 (1989-12-01), Chen et al.
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5416048 (1995-05-01), Blalock et al.
patent: 5536681 (1996-07-01), Jang et al.
patent: 5563104 (1996-10-01), Jang et al.
patent: 5599740 (1997-02-01), Jang et al.
patent: 5661093 (1997-08-01), Ravi et al.
patent: 5679606 (1997-10-01), Wang et al.
patent: 5759913 (1998-06-01), Fulford, Jr. et al.
patent: 5872401 (1999-02-01), Huff et al.

Affiliated with

Also associated with

Rating

Method for forming gap filling silicon oxide intermetal dielectr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming gap filling silicon oxide intermetal dielectr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming gap filling silicon oxide intermetal dielectr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1640744