Method of increasing the stability of a copper to copper interco

Details Method of increasing the stability of a copper to copper interco Method of increasing the stability of a copper to copper interco

1999-01-04

2000-11-07

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438626, 438627, 438637, 438668, 257751, 257758, 257774, 257915, H01L 2144, H01L 2943

Patent

active

061436577

ABSTRACT:
A via is formed between a copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting the copper conductor and the second copper conductor. Form a stop layer over the first copper conductor and a dielectric layer over the stop layer. Pattern the dielectric and etch stop layers by etching a hole therethrough down into a copper conductor leaving an exposed surface of the copper conductor and exposed sidewalls of the dielectric layer and the etch stop layer. Grow a copper germanide (Cu.sub.3 Ge) compound, thin film at the base of the hole on the exposed surface of the copper conductor from exposure to germane GeH.sub.4 gas. Form a barrier layer over the copper germanide (Cu.sub.3 Ge) compound, thin film, the dielectric layer and the first copper conductor. The barrier layer forms a via hole in the hole. Form a second copper conductor including the copper plug over the barrier layer, the copper plug filling the narrow via hole.

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