Method of forming polycrystalline silicon lines and vias on a si

Details Method of forming polycrystalline silicon lines and vias on a si Method of forming polycrystalline silicon lines and vias on a si

1981-02-27

1982-03-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156657, 156662, 357 59, 427 86, H01L 21306

Patent

active

043199542

ABSTRACT:
The method involves the formation of conductive, polycrystalline silicon lines and vias by the conversion of amorphous silicon in contact with the underlying silicon substrate through the use of a laser annealing process.

REFERENCES:
patent: 4074304 (1978-02-01), Shiba
patent: 4179528 (1979-12-01), Losee et al.
patent: 4240843 (1980-12-01), Celler et al.
patent: 4243433 (1981-01-01), Gibbons
Appl. Phys. Lett. 35(1), Jul. 1, 1979, Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artifical Surface-Relief Grating and Laser Crystallization, by M. W. Geis et al., pp. 71-74.
IEDM Technical Digest, 1980, Mosfets Fabrication in (100) Single Crystal Silicon-on-Oxide Obtained by Laser-Induced Lateral Seeding Technique, by H. W. Lam et al., pp. 559-561.

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