Method to prevent passivation from keyhole damage and resist ext

Details Method to prevent passivation from keyhole damage and resist ext Method to prevent passivation from keyhole damage and resist ext

1998-09-17

2000-11-07

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438619, 438421, 438424, 438782, H01L 214763

Patent

active

061436445

ABSTRACT:
A new method of preventing passivation keyhole damage and resist extrusion using a hydrophillic solvent before photoresist coating is described. Semiconductor device structures are formed in and on a semiconductor substrate and covered by an insulating layer. Metal lines are formed overlying the insulating layer wherein there is a gap between two of the metal lines. A passivation layer is deposited overlying the metal lines wherein the gap is not filled completely by the passivation layer. The passivation layer is coated with a hydrophillic solvent wherein the hydrophillic solvent completely fills the gap. The passivation layer is coated with a photoresist layer which is exposed and developed to form a photoresist mask. The hydrophillic solvent completely filling the gap allows a uniform thickness photoresist layer. The passivation layer is etched away where it is not covered by the photoresist mask where a bonding pad is formed.

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patent: 5985747 (1999-11-01), Taguchi

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