Chemical vapor deposition technique for depositing titanium sili

Details Chemical vapor deposition technique for depositing titanium sili Chemical vapor deposition technique for depositing titanium sili

1991-11-08

1994-01-11

Maples, John S.

Fishing, trapping, and vermin destroying

437245, 148DIG147, H01L 21441

Patent

active

052781003

ABSTRACT:
A method of providing a conformal layer of TiSi.sub.x atop a semiconductor wafer within a chemical vapor deposition reactor includes the following steps: a) positioning a wafer within the reactor; b) injecting selected quantities of gaseous Ti(NR.sub.2).sub.4 precursor, gaseous silane and a carrier gas to within the reactor, where R is selected from the group consisting of H and a carbon containing radical, the quantities of Ti(NR.sub.2).sub.4 precursor and silane being provided in a volumetric ratio of Ti(NR.sub.2).sub.4 to silane of from 1:300 to 1:10, the quantity of carrier gas being from about 50 sccm to about 2000 sccm and comprising at least one noble gas; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the precursor and silane to deposit a film on the wafer, the film comprising a mixture of TiSi.sub.x and TiN, the selected temperature being from about 100.degree. C. to about 500.degree. C., and the selected pressure being from about 150 mTorr to about 100 Torr.

REFERENCES:
patent: 4668530 (1987-05-01), Reif et al.
patent: 4804636 (1989-02-01), Groover, III et al.
Fix et al., "Titanium Nitride Thin Films: Properties and APCVD Synthesis Using Organometalic Precursors," pp. 357-362 (1990).

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