Semiconductor memory device with improved immunity to supply vol

Static information storage and retrieval – Read/write circuit – Including signal clamping

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Details

365203, 365190, 365206, G11C 700, G11C 1140

Patent

active

049032380

ABSTRACT:
A semiconductor memory device such as a static RAM (Random Access Memory) device comprises a ground connection circuit of n channel field effect transistors connected between two I/O lines and the ground. The precharge circuit for precharging and the ground connection circuit both operate in response to the signal which is in synchronization with an externally applied external chip select signal. Therefore, the access delay derived from the fluctuation of the supply voltage generated before the change of the external chip select signal can be prevented.

REFERENCES:
patent: 4578781 (1986-03-01), Ogana et al.
patent: 4627031 (1986-12-01), Van Tran
patent: 4712197 (1987-12-01), Sood
patent: 4722074 (1988-01-01), Fujishima et al.
patent: 4758990 (1988-07-01), Uchida
patent: 4780850 (1988-10-01), Miyamoto et al.
patent: 4791613 (1988-12-01), Hardee
patent: 4791616 (1988-12-01), Taguchi et al.
patent: 4813022 (1989-03-01), Matsui et al.
patent: 4829483 (1989-05-01), Ogihara

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