Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-11-25
1998-09-22
Picardat, Kevin
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438 17, H01L 2144
Patent
active
058113517
ABSTRACT:
The main surface of a first semiconductor chip having a first functional element is formed with first testing electrodes for testing the electrical characteristics of the first functional element and first connecting electrodes electrically connected to the first functional element. The main surface of a second semiconductor chip having a second functional element is formed with second testing electrodes for testing the electrical characteristics of the second functional element and second connecting electrodes electrically connected to the second functional element. The first semiconductor chip and the second semiconductor chip are integrated by using an insulating resin, with first bumps formed on the first connecting electrodes being bonded to third bumps formed on the second connecting electrodes.
REFERENCES:
patent: 4693770 (1987-09-01), Hatada
patent: 4948754 (1990-08-01), Kondo et al.
patent: 5162257 (1992-11-01), Yung
patent: 5214308 (1993-05-01), Nishiguchi et al.
patent: 5289631 (1994-03-01), Koopman et al.
patent: 5523629 (1996-06-01), Williams et al.
patent: 5550408 (1996-08-01), Kunifomo et al.
patent: 5591941 (1997-01-01), Acocella et al.
patent: 5591959 (1997-01-01), Cigna et al.
patent: 5598036 (1997-01-01), Ho
patent: 5600180 (1997-02-01), Kusaka et al.
patent: 5621225 (1997-04-01), Shieh et al.
patent: 5625230 (1997-04-01), Park et al.
IBM Technical Disclosure Bulletin, "Multi Level Alloy Joining System for Semiconductor Dig", vol. 21, No. 2, Dec. 1978 pp. 2743-2746.
Kawakita Tetsuo
Matsumura Kazuhiko
Yamane Ichiro
Matsushita Electric - Industrial Co., Ltd.
Matsushita Electronics Corporation
Picardat Kevin
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1621561