Semiconductor pressure detecting device and manufacturing method

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438 53, H01L 2100

Patent

active

058113215

ABSTRACT:
A semiconductor pressure detecting device in which a pressure sensing element (2) made of semiconductor having a diaphragm portion (9), a pedestal (8) for supporting the pressure sensing element (2) and wires (5) connected to the pressure sensing element (2) are molded by a molding resin (6) not so as to mold the diaphragm portion (9), characterized in that a silicon resin layer (4) is adhered on an outer surface of the diaphragm portion (9).

REFERENCES:
patent: 4291293 (1981-09-01), Yamada et al.
patent: 4843454 (1989-06-01), Kato et al.
patent: 5002901 (1991-03-01), Kurtz et al.
patent: 5200363 (1993-04-01), Schmidt
patent: 5266827 (1993-11-01), Kato
patent: 5424249 (1995-06-01), Ishibashi
patent: 5455203 (1995-10-01), Koseki et al.
patent: 5459351 (1995-10-01), Bender
patent: 5585311 (1996-12-01), Ko

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor pressure detecting device and manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor pressure detecting device and manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor pressure detecting device and manufacturing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1621404

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.