Semiconductor device incorporating an output element having a cu

Details Semiconductor device incorporating an output element having a cu Semiconductor device incorporating an output element having a cu

1996-09-17

1998-10-27

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257337, 257343, 257350, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058281126

ABSTRACT:
A semiconductor device having an output element which comprises an IGBT, a diode connected to the IGBT in inverse-parallel, and a voltage-detecting section. The voltage-detecting section comprises a MOSFET and an electrode. The MOSFET is connected to the diode, for generating a voltage proportional to the cathode voltage of the diode. The electrode is provided to detect the voltage generated by the MOSFET. The current flowing in the IGBT can be determined from the voltage detected by the electrode. It is therefore possible to monitor the current flowing through the output element, without increasing the power consumption of the semiconductor device.

REFERENCES:
patent: 4654568 (1987-03-01), Mansmann
patent: 4994904 (1991-02-01), Nakagawa et al.
patent: 5373436 (1994-12-01), Yamaguchi et al.
patent: 5616970 (1997-04-01), Dittrich

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