Semiconductor integrated circuit suppressing noises due to short

Details Semiconductor integrated circuit suppressing noises due to short Semiconductor integrated circuit suppressing noises due to short

1996-10-09

1998-10-27

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257203, 257204, 257207, 257208, 257210, 257373, 257400, 257503, 257504, 257547, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058281088

ABSTRACT:
A semiconductor integrated circuit has a semiconductor substrate on which macrocells are formed. At least one of the macrocells is surrounded by a first diffused region, which may be surrounded by a second diffused region. The first and second diffused regions are connected to power source terminals, respectively. Semiconductor elements included in each macrocell are connected to power source terminals that are independent of the terminals connected to the diffused regions. Alternatively, a voltage is supplied to the diffused regions through power lines that are different from power lines for the semiconductor elements. This arrangement absorbs short-circuit current in CMOS circuitry and/or substrate current produced by the semiconductor elements.

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patent: 5324978 (1994-06-01), Ludikhuize et al.
patent: 5519243 (1996-05-01), Kikuda et al.

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