Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-12-26
1998-10-27
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257408, H01L 2978
Patent
active
058281037
ABSTRACT:
A process for fabricating MOSFET devices with a recessed lightly doped drain, (LDD), has been developed. This process initially involves conventional techniques of forming a silicided polysilicon, (polycide), gate structure, isolated from the silicided source and drain regions by a spacer sidewall insulator. The novel aspect of this process consists of removing the spacer insulator and etching a trench in the region between the metal silicided source/drain and the polycide gate structure. An angled ion implant is then performed to form lightly doped drain regions in the trench region, also extending under the polycide gate. This results in a narrowing of the channel length, thus enhancing device performance.
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Hardy David B.
United Microelectronicws Corp.
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