4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Non-single crystal, or recrystallized, semiconductor...
  6. Non-single crystal, or recrystallized, material containing...

Julie Tsai

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Device structure and method for reducing silicide encroachment

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Device structure and method for reducing silicide encroachment

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate

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Device structure and method for reducing silicide encroachment

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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High performance poly-si1−xgex thin film transistor...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate

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High performance poly-SiGe thin film transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent

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Profile ID: LFUS-PAI-P-1573145

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