Integrated semiconductor device

Details Integrated semiconductor device Integrated semiconductor device

1996-12-04

1998-10-27

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257328, 257337, 257529, 257536, 257538, H01L 2358, H01L 2976, H01L 2900

Patent

active

058280812

ABSTRACT:
A power IC is provided which facilitates applying a high voltage to the gate electrode of the MOS semiconductor element for the power output of the power IC to break down defects around the gate oxide film in a short time thereby screening the power ICs efficiently. A gate terminal for testing is led out from the gate electrode of the MOS type semiconductor element for the power output of the power and the screening test is conducted by applying a high voltage to the gate terminal for testing. The expected bad influence of the applied high voltage on the control circuit is avoided by the level shift means or the switching means switched off only during the screening test and short-circuited after the test is over.

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