Method of manufacturing a semiconductor device using a silicon f

Details Method of manufacturing a semiconductor device using a silicon f Method of manufacturing a semiconductor device using a silicon f

1996-11-20

1998-10-27

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438700, 438788, 438783, 438784, 438787, H01L 21283, H01L 21285

Patent

active

058277781

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a first layer interconnect pattern overlying a substrate, forming consecutively a thin silicon oxide film and a thick silicon fluoride oxide film, selectively etching the silicon fluoride oxide film to expose a part of the silicon oxide film by using a first gas of a low fluorine content, and etching the exposed silicon oxide film by using a second gas of a high fluorine content to form a via-hole reaching the first layer interconnect pattern The silicon oxide film has a thickness from 50 to 200 nm while the silicon fluoride oxide film has a thickness of 1 .mu.m or higher. The thin silicon oxide film provides a reduced amount of an over-etch while thick silicon fluoride oxide film provides a low capacitance for the interconnect to achieve a higher operation of the LSI.

REFERENCES:
patent: 5334552 (1994-08-01), Homma
patent: 5489553 (1996-02-01), Chen
patent: 5661093 (1997-08-01), Ravi et al.
Minako Murakami, et al. "SiOF Films: the Problem in Logic Devices" Semiconductor International pp. 291-292, Jul. 1996.
Japan Abstract of Application Physics and Related Societies Extended Abstracts, 194, Autumn Meeting, Manuscript No. 20P-ZD-13, p. 672 No month.

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