Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-07-26
1998-10-27
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041923, 20419215, 20429806, 20429809, 20429811, C23C 1434
Patent
active
058274081
ABSTRACT:
A sputtering process is chemically enhanced to improve conformality of the sputter deposited film by adding a flow of a halogen-containing etch gas during sputter deposition. A reducing gas can be added near the substrate to aid in the deposition reaction. A physical vapor deposition chamber is modified to provide a reducing gas inlet near the substrate.
REFERENCES:
patent: 4717462 (1988-01-01), Homma et al.
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4849081 (1989-07-01), Ross
patent: 4994162 (1991-02-01), Armstrong et al.
patent: 5073241 (1991-12-01), Watanabe
patent: 5108570 (1992-04-01), Wang
patent: 5122249 (1992-06-01), Niemann et al.
patent: 5294320 (1994-03-01), Somekh et al.
patent: 5330628 (1994-07-01), Demaray et al.
patent: 5358616 (1994-10-01), Ward
patent: 5380414 (1995-01-01), Tepman
patent: 5415753 (1995-05-01), Hurwitt et al.
Bourhila et al, "Thermodynamic and Experimental Study of Cu-LPCVD by Reduction of Copper Chloride", presented at Ad. Matellization Con. in Radebuel, GE, Mar. 19-22, 1995, 11 pages.
Applied Materials Inc
Morris Birgit E.
Nguyen Nam
Verplancken Donald
LandOfFree
Method and apparatus for improving the conformality of sputter d does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for improving the conformality of sputter d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for improving the conformality of sputter d will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1611383