Process for manufacturing MOS-type integrated circuits

Details Process for manufacturing MOS-type integrated circuits Process for manufacturing MOS-type integrated circuits

1995-06-07

1997-12-09

Wojchiechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 71, 257316, 257377, 257382, 257398, 257399, 257412, 257519, H01L 2976

Patent

active

056963998

ABSTRACT:
A process for producing integrated circuits including the steps of: selectively growing field insulating regions of insulating material extending partly inside a substrate having a given type of conductivity; depositing a polycrystalline silicon layer on the substrate; shaping the polycrystalline silicon layer through a mask; and selectively implanting ions of the same conductivity type as the substrate, using the shaping mask, through the field insulating regions. The implanted ions penetrate the substrate and form channel stopper regions beneath the field insulating regions.

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