Semiconductor device with an insulation film having an end cover

Details Semiconductor device with an insulation film having an end cover Semiconductor device with an insulation film having an end cover

1995-04-14

1997-02-18

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257488, 257630, H01L 218249, H01L 2941

Patent

active

056043716

ABSTRACT:
In a semiconductor device, a first conductive film made of, for example, polysilicon is formed on the element region of the semiconductor substrate. An insulation film is formed on the semiconductor substrate, for covering at least the first conductive film. A second conductive film covers at least the end portion of the insulation film. The first conductive film is used as a gate electrode of the MOS transistor, and the second conductive film is used as a protection film for covering and protecting the end portion of the insulation film and a lead-out electrode of the bipolar transistor. The end portion of the insulation film is covered and protected by the second conductive film obtained by patterning the conductive layer made of, for example, polysilicon. Further, the conductive layer is patterned so that stepped portions formed on the insulation film and the end portion of the insulation film are covered, and using this pattern, anisotropic etching is carried out. Thus, formation of residue on the side-wall of the second conductive film, on the stepped portions formed as covering the first conductive film, can be avoided. In a later step, the pattern of the second conductive film which covers the stepped portion is removed by etching.

REFERENCES:
patent: 3999213 (1976-12-01), Brandt et al.
patent: 5091322 (1992-02-01), Maeda et al.
patent: 5119162 (1992-06-01), Todd et al.
Abstract.

Affiliated with

Also associated with

Rating

Semiconductor device with an insulation film having an end cover does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with an insulation film having an end cover, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with an insulation film having an end cover will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1603763