Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-05-24
1997-02-18
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257 66, 257347, 257350, H01L 2904, H01L 31036, H01L 31112, H01L 2701
Patent
active
056043600
ABSTRACT:
Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.
REFERENCES:
patent: 4746628 (1988-05-01), Takafuji et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5403772 (1995-04-01), Zhang et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages).
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
Miyanaga Akiharu
Takayama Toru
Takemura Yasuhiko
Zhang Hongyong
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Loke Steven H.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device including a plurality of thin film transist does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device including a plurality of thin film transist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including a plurality of thin film transist will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1603613