Process for the manufacture of coarsely crystalline to monocryst

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156617SP, 156DIG97, 156DIG64, 422249, 136261, C30B 1102, C30B 1512

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active

044472897

ABSTRACT:
The invention provides a process for the manufacture of coarsely crystalline to monocrystalline sheets and/or plates of semiconductor material of preferred orientation. A meniscus of molten semiconductor material comes in contact with a moving, cooler substrate of the same coarsely crystalline to monocrystalline semiconductor material, during which, while transferring the preferred orientation, a thin sheet of the semiconductor material is pulled onto the substrate and, after cooling, becomes detached from the substrate. The substrate can be reused as often as desired.

REFERENCES:
patent: 4113548 (1978-09-01), Sigmund
patent: 4119744 (1978-10-01), Brissot et al.
patent: 4233338 (1980-11-01), Ricard et al.
patent: 4303463 (1981-12-01), Cook
patent: 4309239 (1982-01-01), Fumeton
patent: 4366024 (1982-12-01), Ast et al.
A. G. Milnes et al., Peeled Film Technology for Solar Cells, IEEE Photovaltic Specialist Conference, 1975, pp. 338-341.
J. D. Heaps et al., Continuous Coating of Silicon-on-Ceramic, Photovaltic Specialist Conference, Jan. 7-10, 1980, pp. 39-48.
Z. A. Zoutendyk, Development of Low-Cost Silicon Crystal Growth Techniques for Terrestrial Photovaltic Solar Energy Conversion, International Solar Energy Society Conference "Sharing the Sun", Aug. 16-20, 1976, pp. 1-14.

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