Method of forming interconnection for semiconductor device

Details Method of forming interconnection for semiconductor device Method of forming interconnection for semiconductor device

1998-08-26

2000-05-02

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438734, 438720, 438742, 438628, 438629, 438660, 257751, H01L 2100

Patent

active

060572280

ABSTRACT:
The present invention relates to a method of forming an interconnection for a semiconductor device using copper. The method of the invention, including the steps of forming an insulating layer having a groove on a semiconductor substrate containing active elements; forming and depositing a copper thin film on the insulating layer including the groove; and reflowing the copper thin film, may reflow the copper thin film deposited on the semiconductor substrate having a high-step surface for less than 30 min. below 450.degree. C., which show improved annealing conditions as compared with the conventional art. In addition, by reducing consumption of thermal energy in accordance with a low-temperature process, copper is restrained from being rapidly diffused through a silicon substrate, electrodes, etc. when forming the interconnection for the semiconductor device, thus improving productivity of the semiconductor devices.

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Kazuhide Abe, Yusuke Harada and Hiroshi Onoda; "Sub-Half Micron Copper Interconnects using Reflow of Sputtered Copper Films"; VMIC Conference, Jun. 27-29, 1995 ISMIC; pp. 308-314.

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