Process for production of semiconductor device with foreign elem

Details Process for production of semiconductor device with foreign elem Process for production of semiconductor device with foreign elem

1997-07-18

2000-05-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438659, 438216, H01L 21318

Patent

active

060572175

ABSTRACT:
A MOS field effect transistor (MOSFET) comprising a semiconductor substrate 11 having thereon a gate silicon dioxide film 12 and a gate electrode 13 both formed by patterning, wherein in only at least one edge of gate lengthwise direction of the gate silicon dioxide film 12 is formed a region 14 containing an element (e.g. nitrogen) which is different from the elements constituting the silicon dioxide film and whose energy of bonding with silicon is larger than the energy of hydrogen-silicon bonding. In this MOSFET, the reliability reduction caused by the local degradation of the gate silicon dioxide film appearing at the edge of its lengthwise direction can be suppressed and, moreover, the property reduction can be suppressed.

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patent: 5516707 (1996-05-01), Loh et al.
patent: 5672525 (1997-09-01), Pan
patent: 5683924 (1997-11-01), Chan et al.
patent: 5750435 (1998-05-01), Pan
T. Hori, "Inversion Layer Mobility under High Normal Field in Nitrided-Oxide MOSFET's", IEEE Transactions on Electron Devices, vol. 37, No. 9, Sep. 1990, pp. 2058-2069.
K. Uwasawa et al., "A New Degradation Mode of Scaled p+ Polysilicon Gate pMOSFETs Induced by Bias Temperature (BT) Instability", IEDM 95, pp. 871-874.

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