Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-11-19
2000-05-02
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438155, 438486, H01L 2126
Patent
active
060571837
ABSTRACT:
A data holding control signal for each data line is supplied to a plurality of source followers that are connected together in parallel. The parallel-connected source followers are a combination of at least one first follower that is illuminated with laser light only once and at least one second follower that is illuminated twice. A width of the laser light illumination for crystallization is equal to a pitch of the source followers multiplied by an integer that is not less than 3.
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Kawasaki Yuji
Koyama Jun
Bowers Charles
Christianson Keith
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
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