Method of making p-i-n photodiodes

Details Method of making p-i-n photodiodes Method of making p-i-n photodiodes

1983-10-03

1984-10-23

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

148189, 148190, 252950, 357 16, 357 30, 357 58, 357 90, H01L 29161, H01L 2990, H01L 2714

Patent

active

044779640

ABSTRACT:
Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ --p.sup.- junction (15) is formed at the depth of the concave segment and a p.sup.- --n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ --p.sup.- --n.sup.- photodiode. Specifically described are InP:Cd photodiodes.

REFERENCES:
patent: 4274103 (1981-06-01), Yamamoto
Lee et al., "High Avalanche Gain in Small-Area InP Photodiodes", Appl. Phys. Lett., vol. 35, No. 7, pp. 511-513, Oct. 1979.
Burrus et al., "InGaAsP P-I-N Photodiodes with Low Dark Current and Small Capacitance", Electronics Lett., vol. 15, No. 20, pp. 655-657, Sep. 1979.
Tien et al., "Diffusion of Cd Acceptors in InP and a Diffusion Theory for III-V Semiconductors", Appl. Phys. Lett., vol. 34, No. 10, pp. 701-704, May 1979.
Tuck et al., "Anomalous Diffusion Profiles of Zinc in GaAs", J. of Material Sci., vol. 7, pp. 585-591, 1972.
Takanashi et al., "Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode," Japanese Journal of Applied Physics, vol. 19, No. 4, pp. 687-691, (Apr. 1980).
Miller et al., "Two Diffusion Regions Observed in the Cd Diffusion of InP," 21st EMC, Abs. No. G-4, (Jun. 1979).
Tuck et al., "Diffusion Profiles of Zinc in Indium Phosphide," Journal of Physics D: Applied Physics, vol. 8, pp. 1806-1821, (1975).
Seltzer, "Diffusion of Manganese Into Gallium Arsenide," Journal of Physical Chemistry Solids, vol. 26, pp. 243-250, (1965).
Woodbury, "Diffusion and Solubility of Ag in CdS," Journal of Applied Physics, vol. 36, No. 7, pp. 2287-2293, (Jul. 1965).
Chang, "Diffusion and Solubility of Zinc in Gallium Phosphide Single Crystals," Journal of Applied Physics, vol. 35, No. 2, pp. 374-378, (Feb. 1964).
van der Maesen et al., "On the Behavior of Rapidly Diffusing Acceptors in Germanium," Journal of Electrochemical Society, vol. 102, pp. 229-234, (May 1954).
H. Ando et al., "Carrier Density Profiles in Zn- and Cd-Diffused InP," Journal of Applied Physics, vol. 20, No. 3, pp. 197-200, (Mar. 1981).
S. Aytac et al., "Shallow and Selective Diffusion of Zinc in Indium Phosphide," Solid-State Electronics, vol. 24, pp. 57-61, (1981).
A. Hooper et al., "Diffusion of Zinc in Indium Phosphide at 700.degree. C.," Solid-State Electronics, vol. 17, pp. 531-538, (1974).

Affiliated with

Also associated with

Rating

Method of making p-i-n photodiodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making p-i-n photodiodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making p-i-n photodiodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1592120