Contact type image sensor with separate charge transfer device

Details Contact type image sensor with separate charge transfer device Contact type image sensor with separate charge transfer device

1987-08-03

1989-10-24

Munson, Gene M.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 15, 357 30, 250578, H01L 2978, H01L 2714, H01L 3100, H01J 4014

Patent

active

048765856

ABSTRACT:
An image sensor includes a charge transfer device such as CCD and BBD which is utilized as a switching element for reading signals.
In the case where the charge transfer device is formed on a P-type semiconductor substrate, electric potential of the P-type semiconductor substrate is set to be equal to or less than that of the bias voltage (which is negative value) applied to the photoelectric conversion elements. On the other hand, if the charge transfer device is formed on an N-type semiconductor substrate, electric potential of the N-type semiconductor substrate is set to be equal to or higher than that of the bias voltage (which is positive value) applied to the photoelelctric conversion elements.

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patent: 4549088 (1985-10-01), Ozawa
patent: 4811069 (1989-03-01), Kakinuma et al.
Terui et al., "A Solid-State Color Image Sensor Using ZnSe-Zn.sub.1-x CdxTe Heterojunction Thin-Film Photoconductor" IEEE Int. Solid-State Circuits Conf. (2/80), DIG. Tech. Papers pp. 34-35.

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