Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-05-06
1996-01-30
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257919, 257390, 257288, H01L 27105, H01L 27085
Patent
active
054882494
ABSTRACT:
The invention concerns approaches to interconnecting individual field-effect transistors (FETs) in integrated circuits (ICs), in order to provide a larger, composite transistor. In one approach, the individual FETs are positioned symmetrically about centroids, which are themselves distributed symmetrically over the IC. The invention allows individual digital transistors to be connected into a larger, composite, analog transistor.
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AT&T Global Information Solutions Company
Bailey Wayne P.
Hardy David B.
Hyundai Electronics America
Limanek Robert P.
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