SOI MOSFET with floating gate

Details SOI MOSFET with floating gate SOI MOSFET with floating gate

1993-12-03

1996-01-30

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257347, H01L 2978

Patent

active

054882435

ABSTRACT:
A semiconductor device of an SOIMOSFET comprising a semiconductor substrate, an insulating layer and a thin film single-crystalline semiconductor layer, the insulating layer containing a floating electrically conductive layer buried therein at a portion corresponding to the channel, the floating electrically conductive layer being electrically insulated from the other portions, the semiconductor device further comprising an electrode adjacent to the floating electrically conductive layer for applying a voltage by which an electric charge is injected into and stored in the floating electroconductive layer.

REFERENCES:
patent: 4748485 (1988-05-01), Vasudev
patent: 4907053 (1990-03-01), Ohmi
Sze, Semiconductor Devices, pp. 495-497, 1985.
Y. Miyazawa et al, "Bonded SOI with Polish-Stopper Technology for ULSI" IEICE Trans. Electron, vol. E75-C, No. 12, Dec. 1992.

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