Semiconductor memory device having memory cells including transi

Details Semiconductor memory device having memory cells including transi Semiconductor memory device having memory cells including transi

1993-12-06

1995-04-25

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

36518901, G11C 1124

Patent

active

054105030

ABSTRACT:
A semiconductor memory device having memory cells including a transistor and a trench type capacitor which are formed on a semiconductor substrate to cooperate with each other to store information. The device includes a trench having a bottom made of a first insulator disposed on the semiconductor substrate and a sidewall made of an epitaxial semiconductor layer which is epitaxially grown on the semiconductor substrate in a substantially vertical direction around the first insulator. The capacitor comprises an impurity diffused layer formed on the sidewall of the trench, a second insulator layer formed over thee impurity diffused layer, and a conductive layer opposite of the impurity diffused layer via the second insulator layer, with the transistor formed on the epitaxial semiconductor layer.

REFERENCES:
patent: 5136533 (1992-08-01), Harari
Takamoto et al., Double Stacked capacitor With Self-Aligned Poly Source/Drain transistor (DSP) Cell For Megabit Dram, IEDM 1987, IEEE pp. 328-331.

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