Production of a thin x-ray amorphous aluminum nitride or aluminu

Details Production of a thin x-ray amorphous aluminum nitride or aluminu Production of a thin x-ray amorphous aluminum nitride or aluminu

1989-01-24

1990-09-18

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 2041922, C23C 1434

Patent

active

049576046

ABSTRACT:
A thin X-ray amorphous aluminum nitride or aluminum silicon nitride film is produced on a surface by vaporization of aluminum or of aluminum and silicon by reactive sputtering or reactive magnetron sputtering under reduced pressure in a process gas atmosphere, so that a sputter gas results, and deposition of the aluminum nitride or of the aluminum silicon nitride from the sputter gas onto the said surface, resulting in the said thin X-ray amorphous aluminum nitride or aluminum silicon nitride film, by a process in which the said process gas atmosphere consists essentially of nitrogen and argon and one or more further noble gases selected from the group consisting of neon, krypton and xenon, the volume ratio of argon to the further noble gases being from 2:1 to 100:1 and the volume ratio of the further noble gases to nitrogen being from 2:1 to 10:1.

REFERENCES:
patent: 4529651 (1985-07-01), Kitoo et al.
patent: 4851096 (1989-07-01), Yamada et al.
J. M. Lagorsse & B. Serzec, "Proceedings of the Seventh National Vacuum Congress and 3rd International Conference of Solid Surfaces", Wien 1977, S. 1995-1997.
F. Takeda, T. Mori, T. Takahashi "Japanese Journal of Applied Physics", Band 20, Nr. 3, Marz 1981, S. L 164-L 172.
Li Xinjiao, Xu Zechuan, He Ziyou, Cao Huazhe, Su Wuda, Chen Zhougcai, Zhou Feng & Wang Enguang "Thin Solid Films", Band 139, 1986, S. 261-274.
S. Bhat, S. Ashok, S. J. Fonash & L. Tongson "Journal of Electronic Materials", Band 14, Nr. 4, 1985, S. 405-418.
C. R. Aita, C. J. Gawlak "Journal of Vacuum Science and technology" Band A 1, Nr. 2, Apr.-Jun. 1983, S. 403-496.

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