Method for etching high aspect ratio features

Details Method for etching high aspect ratio features Method for etching high aspect ratio features

1993-02-26

1995-04-25

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156646, 156667, 156656, 156657, H01L 2100

Patent

active

054095638

ABSTRACT:
A method for forming high aspect ratio features such as trenches in a semiconductor structure includes dry etching a substrate in a glow discharge system at elevated temperature. With the dry etching carried out at an elevated temperature of between about 300.degree. to 1100.degree. C., the diffusion of a reactant gas into the features is increased and the diffusion of byproduct molecules out of the features is increased. This increases the etch rate for forming the features, and allows features with very high aspect ratio to be formed at a high etch rate.

REFERENCES:
patent: 5068007 (1991-11-01), Rogers et al.
patent: 5160405 (1992-11-01), Miyouchi et al.
patent: 5200032 (1993-04-01), Shinohara
"Fast Silicon Etching Using an Expanded Cascade Arc Plasma in ASFG/Argon Mixture"; Beulens et al.; J. Vac. Sci., B, vol. 10, No. 6; pp. 2387-2392; Dec. 1992.
"Highly Selective Sputtering of Silicon from TiSi.sub.2 at Elevated Temperature"; Harper et. al; Appl. Phys. Lett., vol. 60, No. 10; pp. 1196-1198; Mar. 1992.
"Temperature Dependence of Reactive Ion Etching of GaAs with CCl.sub.2 F.sub.2 "; Pearton et al.; J. Appl. Phys., vol. 66, No. 8; pp. 3829-3849; Oct. 1989.
"Air Microwave Plasma Etching of Polycrystalline Diamond Thin Films", J. Elect. Soc.; vol. 139, No. 7, pp. 1988-1993; Jul. 1992, Ramesham et. al.

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