Semiconductor memory device having power line arranged in a mesh

Details Semiconductor memory device having power line arranged in a mesh Semiconductor memory device having power line arranged in a mesh

1996-07-29

1997-07-22

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365203, 365 51, 365 63, G11C 700

Patent

active

056509723

ABSTRACT:
A semiconductor memory device includes a sense amp band including a plurality of sense amplifiers, and a plurality of operation power supply potential lines and a plurality of ground potential lines arranged in a meshed shape. The operation power supply potential lines and the ground potential lines include the lines arranged in parallel with and in proximity to the sense amp band. Each sense amplifier in the sense amp band is connected to an operation power supply potential line and a ground line arranged in proximity to and in parallel with the sense amplifier through a drive component. The drive component is provided one for a predetermined number of sense amplifiers, and is rendered conductive in response to a sense amplifier activation signal from a signal line arranged in parallel with the sense amp band. The plurality of operation power supply potential lines and the plurality of ground lines arranged in a meshed shape are contacted at crossings. Therefore, in the semiconductor memory device, no distribution of power supply potentials is generated to allow a stable supply of a power supply potential and a ground potential to an arbitrary circuit portion. In addition, since a sense amplifier is connected to a proximate operation power supply potential line and ground line through a drive component, a reliable and high-speed sensing operation is possible irrespective of a length of a sense amp drive signal line.

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Toshio Yamada, et al., "A 64 Mb DRAM with Meshed Power Line and Distributed Sense-Amplifier Driver", 1991 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp. 108-109.
Satoshi Takano, et al., "A GaAs 16K SRAM with a Single 1-V Supply", IEEE Journal of Solid-State Circuits, vol. SC-22, No. 5, Oct. 1987, pp. 699-703 .

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