Semiconductor device having inversion inducing gate

Details Semiconductor device having inversion inducing gate Semiconductor device having inversion inducing gate

1996-05-06

1997-10-14

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257315, 257316, 257319, 257326, 257340, 36518501, 36518507, 36518511, H01L 29788, H01L 2976, H01L 2994, G11C 1134

Patent

active

056775563

ABSTRACT:
A semiconductor device is characterized by comprising a semiconductor substrate, a first insuring film formed on the semiconductor substrate, a plurality of cell transistors each having a control gate formed on the semiconductor substrate through the first insulating film, a second insulating film formed on upper and side surfaces of the control gate, and a conductive film formed on at least the side surface of the control gate through the second insulating film.

REFERENCES:
patent: 3893152 (1975-07-01), Lin
patent: 4622570 (1986-11-01), Taguchi
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5150179 (1992-09-01), Gill
patent: 5280446 (1994-01-01), Ma et al.

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