Particle source for a reactive ion beam etching or plasma deposi

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

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31511121, 31511131, 31511181, 313230, 250423R, H01J 2716, H05H 146

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active

049873466

ABSTRACT:
The invention relates to a particle source with which positive, negative, and neutral particles can be generated and applied on a substrate. The particle source comprises a container (26) in which a gas or gas mixture to be ionized is held. Into this container (26) an electromagnetic wave irradiates which preferably is a microwave. A torus-shaped magnetic field, which is generated with the aid of permanent magnets (32, 33) or electromagnets, simultaneously projects into the container (26). With the aid of a special control grid configuration (38, 39, 40) it becomes possible to draw off positive, negative or neutral particles from the container (26).

REFERENCES:
patent: 3778656 (1973-12-01), Fremiot et al.
patent: 4065369 (1977-12-01), Ogawa et al.
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4433228 (1984-02-01), Nishimatsu et al.
patent: 4481229 (1984-11-01), Suzuki et al.
patent: 4492620 (1985-01-01), Matsuo et al.
patent: 4507588 (1985-03-01), Asmussen et al.
patent: 4543465 (1985-09-01), Sakuda et al.
patent: 4585541 (1986-04-01), Miyake et al.
patent: 4585668 (1986-04-01), Asmussen et al.
patent: 4610770 (1986-09-01), Saito et al.
patent: 4611121 (1986-09-01), Miyamura et al.
patent: 4630566 (1986-12-01), Asmussen et al.
patent: 4691662 (1987-09-01), Roppel et al.
patent: 4713585 (1987-12-01), Ohno et al.
patent: 4739169 (1988-04-01), Kurosawa et al.
patent: 4739170 (1988-04-01), Varga
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4767931 (1988-08-01), Sato et al.
patent: 4788473 (1988-11-01), Mori et al.
patent: 4857809 (1989-08-01), Torii et al.
patent: 4870284 (1989-09-01), Hashimoto et al.
Low Temperature Oxidation of Silicon in a Microwave-Discharged Oxygen Plasma, J. Electrochem.: Solid-State Science & Technology, Jun., 1985, pp. 1460-1466.
The Neutral Particles Injectors RIG for Fusion Reactors, Atomkernenergie-Kerntechnik, vol. 44, (1984), No. 1, pp. 81-86.
A Parametric Study of the Etching of Silicon in SF.sub.6 Microwave Multipolar Plasmas, Japanese Journal of Applied Physics, vol. 26, No. 6, Jun. 1987, pp. 825-834.
Very High Current ECR Ion Source for an Oxygen Ion Implanter, Nuclear Instruments and Methods in Physics Research, B21(1989), pp. 178-181.

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