Method for forming silicon film

Details Method for forming silicon film Method for forming silicon film

1996-02-12

1997-10-14

Kunemund, Robert

Fishing, trapping, and vermin destroying

437225, 437233, H01L 2120

Patent

active

056772351

ABSTRACT:
A number of semiconductor wafers are retained in a wafer boat such that the wafers are disposed at intervals in the vertical direction. The wafer boat is loaded into a process tube of a vertical type thermal processing apparatus. The inside of the process tube is heated to 300.degree. to 530.degree. C. in a depressurized atmosphere, and a process gas including a disilane gas is fed into the process tube such that the disilane gas flows at a flow rate of 300 SCCM or more, thereby to form silicon films.

REFERENCES:
patent: 4745088 (1988-05-01), Inoue et al.
patent: 4877753 (1989-10-01), Freeman
patent: 4989540 (1991-02-01), Fuse et al.
patent: 5116784 (1992-05-01), Ushikawa
patent: 5198387 (1993-03-01), Tang
patent: 5256566 (1993-10-01), Bailey
J.M. Blum et al., "Low Pressure CVD Process for Micro and Polycrystalline Silicon," IBM Technical Disclosure Bulletin, vol. 26, No. 3A, pp. 921-922, Aug. 1983.

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