Process for production of micropattern utilizing antireflection

Details Process for production of micropattern utilizing antireflection Process for production of micropattern utilizing antireflection

1995-10-24

1997-10-14

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430323, 430325, 430376, 430510, 430512, 430523, 430950, G03C 1825, G03F 730

Patent

active

056771118

ABSTRACT:
A process for production of a micropattern, comprised of a step for forming an antireflection film comprised of an inorganic film on an underlying substrate, a step for forming a resist film on said antireflection film, a step for exposing said resist film using i-rays or light of a wavelength shorter than i-ray and transferring a mask pattern to the resist film, a step for using the resist film on which the mask pattern had been transferred as a mask to etch the antireflection film and transfer the mask pattern to the antireflection film; and a step for using the antireflection film on which said mask pattern had been transferred as a mask to etch the underlying substrate and transfer the mask pattern to the underlying substrate.

REFERENCES:
patent: 4407927 (1983-10-01), Kamoshida et al.
patent: 5077185 (1991-12-01), Cho et al.
patent: 5472827 (1995-12-01), Ogawa et al.
patent: 5472829 (1995-12-01), Ogawa

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