Non-volatile semiconductor device

Details Non-volatile semiconductor device Non-volatile semiconductor device

1994-02-15

1995-09-26

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257640, 257647, H01L 2934

Patent

active

054536340

ABSTRACT:
A memory coil section, formed on a semiconductor substrate and including a floating gate and a control gate, for storing a charge in a non-volatile semiconductor device is covered with a silicon nitride layer. The periphery of a contact hole for allowing contact between a wiring layer and the substrate is also covered with a silicon nitride layer.

REFERENCES:
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4364167 (1982-12-01), Douley
patent: 4455568 (1984-12-01), Shiota
patent: 4642881 (1987-02-01), Matuskawa
patent: 4665426 (1987-05-01), Allen et al.
patent: 4789560 (1988-12-01), Yen
"Nitride Sidewall Spacers Used on a Contamination Barrier", IBM Technical Discolsure Bulletin, vol. 30 (Jan. 1988) pp. 295-296.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1553531