Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-05-23
1998-04-07
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257140, 257470, H01L 2976
Patent
active
057367698
ABSTRACT:
A semiconductor apparatus includes an insulated gate semiconductor device used as a power device and a pn diode used as a temperature sensor on a single semiconductor substrate. Heat generated in the power device is conducted to the temperature sensor. The voltage across a forward biased pn diode fed by a constant current source is sensitive to temperature. The temperature of the power device is measured by feeding a small current from a constant current supply to the pn diode and by detecting the forward voltage of the pn diode. When the forward voltage reaches a predetermined value, an external protection circuit is activated to prevent overheating. Multiple pn diodes may be connected in series to detect the temperature of multiple power devices more accurately.
REFERENCES:
patent: 4992844 (1991-02-01), Yakushiji
Fujihira Tatsuhiko
Nishiura Akira
Fuji Electric & Co., Ltd.
Prenty Mark V.
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