Semiconductor device including a CMOSFET of a single-gate

Details Semiconductor device including a CMOSFET of a single-gate Semiconductor device including a CMOSFET of a single-gate

1996-07-02

1998-04-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257412, 257413, 257402, 257392, 257388, 257407, H01L 2978

Patent

active

057367671

ABSTRACT:
A semiconductor device including a CMOSFET having first and second channel type MOSFETs, respectively formed in a first semiconductor region of a first conductivity type and in a second semiconductor region of a second conductivity type. The first channel type MOSFET has a first gate electrode insulatively formed on the first region, made of a first conductivity type semiconductor, and having a gate length of 0.2 .mu.m or less, first source/drain regions of the second conductivity type respectively formed in the first region and having a LDD structure, and a buried channel region of the second conductivity type formed just below the first gate electrode. The second channel type MOSFET has a second gate electrode insulatively formed on the second region, made of a first conductivity type semiconductor, and having a gate length of 0.2 .mu.m or less, second source/drain regions of the first conductivity type respectively formed in the second region and having a LDD structure.

REFERENCES:
patent: 5164801 (1992-11-01), Hieda et al.
patent: 5329138 (1994-07-01), Mitani et al.
patent: 5543356 (1996-08-01), Murakami et al.

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