Anisotropic polysilicon plasma etch using fluorine gases

Details Anisotropic polysilicon plasma etch using fluorine gases Anisotropic polysilicon plasma etch using fluorine gases

1994-11-01

1995-09-26

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566511, 1566621, H01L 2100

Patent

active

054531560

ABSTRACT:
A process for dry etching a polysilicon layer or gate structure of an integrated circuit is achieved. More particularly, a process for overetching a polysilicon layer using, in place of a conventional chloride gas (e.g., CCl.sub.4), a fluorine gas, such as C.sub.2 F.sub.6 or CF.sub.4 is disclosed. After the main etch step, a passivation formation step is performed where a mixture of helium and fluorine gases is flowed into a plasma etch chamber. Next, an overetch is performed by flowing a mixture of helium and chlorine gas. This process eliminates the need to use CCl.sub.4 or other harmful ozone containing gases in the overetch step. Moreover, an acceptable polysilicon sidewall profile is achieved and no undercutting of the polysilicon layer is experienced using this process.

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