Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-21
1998-04-07
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257291, 257 72, 257 59, 438 4, H01L 31062
Patent
active
057367582
ABSTRACT:
A thin film electronic imager device has a repaired area between an upper conductive layer and an underlying component in the array in which portions of the upper conductive layer and a dielectric layer have been removed such that the upper conductive layer is electrically isolated from the underlying component. The repaired area has a bottom level having a surface comprising material of the underlying component and an intermediate step level having a surface comprising the dielectric layer material that extends around the periphery of the repaired area. The lateral dimension of the intermediate step level is greater than the lateral dimension of the bottom level such that the width of the intermediate level step surface is in the range between about 1 .mu.m and 3 .mu.m. Formation of the structure in the repair area is done by removing material by laser ablation to set back the upper conductive layer from the sidewall of the dielectric material in the region in which the defect was excised.
REFERENCES:
patent: 4688896 (1987-08-01), Castleberry
patent: 4774193 (1988-09-01), Juergens
patent: 4803536 (1989-02-01), Tuan
patent: 5019002 (1991-05-01), Holmberg
patent: 5055416 (1991-10-01), Weber
patent: 5195010 (1993-03-01), Dresner
patent: 5302547 (1994-04-01), Wojnarowski et al.
patent: 5303074 (1994-04-01), Salisbury
patent: 5313319 (1994-05-01), Salisbury
patent: 5354711 (1994-10-01), Heitzmann et al.
patent: 5475246 (1995-12-01), Wei et al.
patent: 5480812 (1996-01-01), Salisbury
patent: 5518956 (1996-05-01), Liu et al.
W. L. Wright, "Electrostatic Discharge Protection of FET Gates With Thin Film Capacitors", IBM Technical Disclosure Bulletin, vol. 21, No. 6, Nov. 1978, pp. 2396-2397.
General Electric Company
Ingraham Donald S.
Whitehead Carl W.
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