Metal organic vapor phase epitaxial growth of group III-V semico

Details Metal organic vapor phase epitaxial growth of group III-V semico Metal organic vapor phase epitaxial growth of group III-V semico

1990-11-01

1991-07-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG26, 148DIG110, 437 89, 437939, 437971, H01L 2120

Patent

active

050360221

ABSTRACT:
This invention is directed to a method of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) of Group III-V compound semiconductors in a hot wall reactor. Epitaxy is accomplished by use of precursors having a metal, an organic ligand, and an inorganic ligand. The system is operated at very low pressures to provide a high throughput of wafers and a highly uniform deposition growth. The invention is further directed to the use of the class of precursors to selectively grow III-V compounds on a masked substrate, wherein growth occurs epitaxially on the exposed areas of the substrate but not on the surrounding mask.

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