Bipolar transistor having a buried collector layer

Details Bipolar transistor having a buried collector layer Bipolar transistor having a buried collector layer

1993-10-14

1995-04-11

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257505, 257520, 257576, 257587, 257588, H01L 2972, H01L 2702, H01L 2904, H01L 2912

Patent

active

054061130

ABSTRACT:
A bipolar transistor includes a substrate, an insulating layer formed on the substrate, and a semiconductor layer having a bottom surface and side surfaces surrounded by the insulating layer. The semiconductor layer includes a collector region formed in a first surface portion of the semiconductor layer, and a collector lead region having a concentration higher than that of the collector region. The collector read region includes a silicon single crystal layer formed in a second surface portion of the semiconductor layer, and a polysilicon layer having side surfaces surrounded by the silicon single crystal layer. A base region is formed on the collector region, and an emitter region is formed in the base region.

REFERENCES:
patent: 3648128 (1972-03-01), Kobayashi
patent: 4660068 (1987-04-01), Sakuma et al.
patent: 4889823 (1989-12-01), Bertagnolli et al.
Gotou et al., "Soi-Device on Bonded Wafer", Fujitsu Sci. Tech. J., 24,4, pp. 408-417, Dec. 1988.

Affiliated with

Also associated with

Rating

Bipolar transistor having a buried collector layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar transistor having a buried collector layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor having a buried collector layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1540430