Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...
Patent
1994-02-01
1995-04-11
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With electric field controlling semiconductor layer having a...
257492, 257335, H01L 27092, H01L 27105
Patent
active
054061105
ABSTRACT:
A transistor (10) has a thin epitaxial layer (14) of a second conductivity type on a semiconductor substrate (12) of a first conductivity type. A drift region (24) of the second conductivity type is formed extending through the thin epitaxial layer (14) to the substrate (12). A thick insulator layer (26) is formed on the drift region (24). An IGFET body (28) of the first conductivity type is formed adjacent the drift region (24). A source region (34) of the second conductivity type is formed within the IGFET body (28) and spaced from the drift region (24) defining a channel region (40) within the IGFET body (28). A conductive gate (32) is insulatively disposed over the IGFET body (28) and extends from the source region (34) to the thick insulator layer (26). A drain region (36) is formed adjacent the drift region (24).
REFERENCES:
patent: 4922327 (1990-05-01), Mena et al.
patent: 5237193 (1993-08-01), Williams et al.
patent: 5304827 (1994-04-01), Malhi et al.
Efland Taylor R.
Kwon Oh-Kyong
Malhi Satwinder
Ng Wai T.
Donaldson Richard L.
Fahmy Wael M.
Garner Jacqueline J.
Hille Rolf
Hiller William E.
LandOfFree
Resurf lateral double diffused insulated gate field effect trans does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resurf lateral double diffused insulated gate field effect trans, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resurf lateral double diffused insulated gate field effect trans will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1540409